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FQA90N15

N-Channel Power MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •90A,150V,RDS(on)=0.018Ω@VGS=10V •Lowgatecharge(typical220nC) •LowCrss(typical200pF) •Fastswitching •1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQA90N15

N-Channel Power MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •90A,150V,RDS(on)=0.018Ω@VGS=10V •Lowgatecharge(typical220nC) •LowCrss(typical200pF) •Fastswitching •1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQA90N15

N-Channel Power MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQA90N15-F109

N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ

Description TheseN-Channelenhancementmodepowerfield effecttransistorsareproducedusingONSemiconductor’s proprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitching performance,andwi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

FQA90N15_F109

N-Channel Power MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

CEB90N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEF90N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEP90N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

FKBA90N15

N-Ch150VFastSwitchingMOSFETs

GeneralDescription AdvancedTrenchMOSTechnology LowGateCharge LowRDS(ON) 100EASGuaranteed GreenDeviceAvailable Applications LoadSwitch LEDApplications NetworkingApplications QuickCharger

FETEKFETek Technology Corp.

台灣東沅公司 東沅科技股份有限公司

FETEK

FKP90N15

N-Ch150VFastSwitchingMOSFETs

GeneralDescription ⚫AdvancedTrenchMOSTechnology ⚫LowGateCharge ⚫LowRDS(ON) ⚫100EASGuaranteed ⚫GreenDeviceAvailable Applications ⚫LoadSwitch ⚫LEDApplications ⚫NetworkingApplications ⚫QuickCharger

FETEKFETek Technology Corp.

台灣東沅公司 東沅科技股份有限公司

FETEK

FQH90N15

N-ChannelPowerMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •90A,150V,RDS(on)=0.018Ω@VGS=10V •Lowgatecharge(typical220nC) •LowCrss(typical200pF) •Fastswitching •1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQH90N15

N-ChannelPowerMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQH90N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.018Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXTA90N15T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXTA90N15T

PreliminaryTechnicalInformationTrenchGatePowerMOSFETN-ChannelEnhancementMode

IXYS

IXYS Integrated Circuits Division

IXYS

IXTH90N15T

PreliminaryTechnicalInformationTrenchGatePowerMOSFETN-ChannelEnhancementMode

IXYS

IXYS Integrated Circuits Division

IXYS

IXTH90N15T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXTK90N15

N-ChannelEnhancementMode

HighCurrentMegaMOS™FET N-ChannelEnhancementMode Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Advantages •Easyto

IXYS

IXYS Integrated Circuits Division

IXYS

IXTK90N15

iscN-ChannelMOSFETTransistor

•FEATURES •DrainSourceVoltage-:VDSS=150V(Min) •Staticdrain-sourceon-resistance:RDS(on)≤16mΩ@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverters •HighCurrentSwitchingApplication

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IXTP90N15T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

详细参数

  • 型号:

    FQA90N15

  • 功能描述:

    MOSFET 150V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商 型号 品牌 批号 封装 库存 备注 价格
onsemi
23+
TO-3PN
30000
晶体管-分立半导体产品-原装正品
询价
ON/FSC
23+
TO-3P
26500
原装现货!品质为先!请来电垂询!
询价
FSC
23+
TO-3P
71260
进口原厂原装
询价
ONSemi
2108
TO-3P-3L
4877
全新原装公司现货
询价
FAIRCHILD/仙童
22+
TO-3P
326
只做原装进口 免费送样!!
询价
ON/安森美
23+
TO-247
90000
只做原厂渠道价格优势可提供技术支持
询价
ONSEMI
2021+
TO-247
9000
原装现货,随时欢迎询价
询价
仙童
13+15+
TO-3P
36
只做原装正品
询价
ONN
23+
N/A
4499
原装原装原装哈
询价
仙童
13+
TO-3P
15000
主营MOS管,一级代理仙童,现货供应FQA90N15,全新原装正品,大量现货库存热卖。
询价
更多FQA90N15供应商 更新时间2024-3-29 14:14:00