900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：633.39 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，QFET®，900 V，7 A，1.1 Ω，TO-3PF

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •7.0A, 900V, RDS(on)= 1.1Ω（最大值）@VGS = 10 V, ID = 3.5A栅极电荷低（典型值：60nC)\n•低 Crss（典型值23pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

Superior Avalanche Rugged Technology

文件：200.07 Kbytes 页数：7 Pages

SEMIHOW

900V N-Channel MOSFET

文件：1.17763 Mbytes 页数：7 Pages

SEMIHOW

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯