500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

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ISC

无锡固电

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance -

文件：104.29 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance -

文件：104.29 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerRF Power MOSFETs

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance -

文件：112.96 Kbytes 页数：2 Pages

IXYS

艾赛斯