300V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=38.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

N 沟道 QFET® MOSFET 300 V，38.4 A，85 mΩ

此类 N 沟道增强型电场效应晶体管是使用安森美半导体的平面条纹和 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供出色的开关性能，可承受雪崩和换相模式下的高能量脉冲。这些器件非常适用于高效开关模式电源、功率因数校正、基于半桥的电子灯镇流器。 •38.4 A、300 V、RDS(on) = 85 mΩ（最大值）（VGS = 10 V、ID = 19.2 A）\n•低栅极电荷（典型值 90 nC)\n•低 Crss（典型值 70 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=38A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

文件：296.3 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 38A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and Current Regulators

文件：322.55 Kbytes 页数：2 Pages

ISC

无锡固电