250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=34A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

250V N-Channel MOSFET

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=21.7A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：421.4 Kbytes 页数：2 Pages

ISC

无锡固电

250V N-Channel MOSFET

文件：686.04 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体