900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：663.85 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=7.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.96Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

900V N-Channel MOSFET

ONSEMI

安森美半导体

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：633.39 Kbytes 页数：8 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，QFET®，900 V，7 A，1.1 Ω，TO-3PF

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •7.0A, 900V, RDS(on)= 1.1Ω（最大值）@VGS = 10 V, ID = 3.5A栅极电荷低（典型值：60nC)\n•低 Crss（典型值23pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体