300V N-Channel MOSFET

300V N-Channel MOSFET

文件：712.62 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：421.58 Kbytes 页数：2 Pages

ISC

无锡固电

300V N-Channel MOSFET

ONSEMI

安森美半导体

300V N-Channel MOSFET

Features • 14.4A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • RoHS Compliant

文件：744.58 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

300V N-CHANNEL MOSFET

Features • 14.4A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • RoHS Compliant

文件：1.24511 Mbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

300V N-Channel MOSFET

Features • 14.4A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • RoHS Compliant

文件：744.58 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司