300V N-CHANNEL MOSFET

Features • 14.4A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • RoHS Compliant

文件：1.24511 Mbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

300V N-Channel MOSFET

Features • 14.4A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 23 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • RoHS Compliant

文件：744.58 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

300V N-Channel MOSFET

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文件：728.58 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14.4A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.29Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：303 Kbytes 页数：2 Pages

ISC

无锡固电