N-Channel MOSFET

Features ■ Typ rDS(on) = 108mΩ at VGS = 10V, ID = 25.5A ■ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated

文件：500.47 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，UltraFET®，250V，25.5A，131mΩ

N-Channel UltraFET® 250 V, 25.5 A, 131 mΩ •典型 rDS(on)=108 mΩ，条件是 VGS=10 V、ID=25.5 A \n•典型 Qg(tot)=45 nC，条件是 VGS =10 V、ID =27 A \n•UIS 能力\n•符合 RoHS 标准\n•符合 AEC Q101;

ONSEMI

安森美半导体

MOSFET N-CH 250V 25.5A D2PAK

ONSEMI

安森美半导体

250V N-Channel MOSFET

文件：784.44 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

250V N-Channel MOSFET

Features ■ Typ rDS(on) = 108mΩ at VGS = 10V, ID = 25.5A ■ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated

文件：1.10517 Mbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energ

文件：768.71 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司