80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.115Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

80V N-Channel MOSFET

ONSEMI

安森美半导体

80V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：571.43 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

80V LOGIC N-Channel MOSFET

General Description\nThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a hi • 12.9A, 80V, RDS(on)= 0.1Ω@VGS= 10 V\n• Low gate charge ( typical 8.8 nC)\n• Low Crss ( typical 29 pF)\n• Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability\n• Low level gate drive requirements allowing direct operation from logic drives;

ONSEMI

安森美半导体