200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：661.92 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=31A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.080Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：287.91 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，31 A，80 mΩ，D2PAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •31A, 200V, RDS(on)= 75mΩ（最大值）@VGS = 10 V, ID = 15.5A栅极电荷低（典型值：55nC)\n•低 Crss（典型值52pF)\n•100% 经过雪崩击穿测试\n•低电平栅极驱动要求允许直接从逻辑驱动器进行操作\n•符合 RoHS 标准\n•RoHS compliant;

ONSEMI

安森美半导体

200V N-Channel MOSFET

文件：769.68 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：661.92 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

200V N-Channel MOSFET

文件：732.05 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体