200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：661.92 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

200V N-Channel MOSFET

文件：732.05 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel 200 V (D-S) MOSFET

文件：944.26 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=31A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.075Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.07 Kbytes 页数：2 Pages

ISC

无锡固电