isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=25.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

250V N-Channel MOSFET

文件：784.44 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

250V N-Channel MOSFET

ONSEMI

安森美半导体

N-Channel MOSFET

Features ■ Typ rDS(on) = 108mΩ at VGS = 10V, ID = 25.5A ■ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated

文件：500.47 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，UltraFET®，250V，25.5A，131mΩ

N-Channel UltraFET® 250 V, 25.5 A, 131 mΩ •典型 rDS(on)=108 mΩ，条件是 VGS=10 V、ID=25.5 A \n•典型 Qg(tot)=45 nC，条件是 VGS =10 V、ID =27 A \n•UIS 能力\n•符合 RoHS 标准\n•符合 AEC Q101;

ONSEMI

安森美半导体

MOSFET N-CH 250V 25.5A D2PAK

ONSEMI

安森美半导体