FQI34N20

200VN-ChannelMOSFET

FQI34N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQP34N20

THINKI40A,200VMaturedPlanarN-ChannelPowerMOSFETs

Features •40A,200V,RDS(on)=0.060Ω@VGS=10V •Lowgatecharge(typical154nC) •LowCrss(typical101pF) •Fastswitching •100%avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FQP34N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=31A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.075Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQP34N20

N-Channel200V(D-S)MOSFET

FQP34N20

200VN-ChannelMOSFET

FQP34N20L

200VLOGICN-ChannelMOSFET

FQPF34N20

200VN-ChannelMOSFET

Features •17.5A,200V,RDS(on)=0.075Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical55pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQPF34N20

THINKI40A,200VMaturedPlanarN-ChannelPowerMOSFETs

Features •40A,200V,RDS(on)=0.060Ω@VGS=10V •Lowgatecharge(typical154nC) •LowCrss(typical101pF) •Fastswitching •100%avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FQPF34N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=17.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.075Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.