N-Channel QFET짰 MOSFET 600 V, 7.5 A, 1.2 廓

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：804.09 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：644.54 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel QFET짰 MOSFET 600 V, 7.5 A, 1.2 廓

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：804.09 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：927.42 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司