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FQB33N10

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:585.35 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB33N10

N-Channel QFET MOSFET

文件:1.23197 Mbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB33N10

100V N-Channel MOSFET

文件:330.83 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB33N10

丝印:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

文件:309.54 Kbytes 页数:2 Pages

ISC

无锡固电

FQB33N10

功率 MOSFET,N 沟道,QFET®,100 V,33 A,52 mΩ,D2PAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻,并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •33A, 100V, RDS(on)= 52mΩ(最大值)@VGS = 10 V, ID = 16.5A栅极电荷低(典型值:38nC)\n•低 Crss(典型值62pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体

FQB33N10L

N-Channel QFET MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:1.89098 Mbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB33N10L

N-Channel MOSFET

FEATURES ·Drain Current -ID= 33A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.052Ω(Max)@VGS= 10V APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件:317.36 Kbytes 页数:2 Pages

ISC

无锡固电

FQB33N10L

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:660.05 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB33N10LTM

N-Channel QFET MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:1.89098 Mbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB33N10_04

100V N-Channel MOSFET

文件:330.83 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

技术参数

  • Pb-free:

    Pb

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    100

  • VGS Max (V):

    ±25

  • VGS(th) Max (V):

    4

  • ID Max (A):

    33

  • PD Max (W):

    127

  • RDS(on) Max @ VGS = 10 V(mΩ):

    52

  • Qg Typ @ VGS = 10 V (nC):

    38

  • Ciss Typ (pF):

    1150

  • Package Type:

    D2PAK-3/TO-263-2

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
询价
仙童
06+
TO-263
3500
原装库存
询价
F
24+
TO263
5000
只做原装公司现货
询价
FAIRCHIL
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
FCS
18+
TO-2632L(D2PAK)
41200
原装正品,现货特价
询价
FAIRCHILD
20+
TO-2632L(D2PAK)
36900
原装优势主营型号-可开原型号增税票
询价
24+
TO-263
6430
原装现货/欢迎来电咨询
询价
FAIRCHILD/仙童
23+
TO-2632L(D2PAK)
50000
全新原装正品现货,支持订货
询价
ON/安森美
2022+
TO-263
20488
原厂代理 终端免费提供样品
询价
FAIRCHILD
1932+
TO-263
548
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多FQB33N10供应商 更新时间2025-10-5 17:06:00