300V N-Channel MOSFET

Features • 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V • Low gate charge ( typical 5.5 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：724.04 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

300V N-Channel MOSFET

ONSEMI

安森美半导体

300V N-Channel MOSFET

300V N-Channel MOSFET

文件：740.48 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.4A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.62 Kbytes 页数：2 Pages

ISC

无锡固电

300V N-Channel MOSFET

Features • 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V • Low gate charge ( typical 5.5 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：724.04 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司