200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 6.0 pF) • Fast swit

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FAIRCHILD

仙童半导体

200V LOGIC N-Channel MOSFET

ONSEMI

安森美半导体

200V N-Channel MOSFET

Features • 3.0 A, 200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V • Low gate charge (Typ. 5.0 nC) • Low Crss (Typ. 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：701.83 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel QFET MOSFET 200 V, 3.0 A, 1.4

Features • 3.0 A, 200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V • Low gate charge (Typ. 5.0 nC) • Low Crss (Typ. 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：781.21 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：304.77 Kbytes 页数：2 Pages

ISC

无锡固电