FQB4N25

250V N-Channel MOSFET

250VN-ChannelMOSFET

FQD4N25

N-ChannelQFETMOSFET

FQD4N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD4N25

250VN-ChannelMOSFET

Features •3.0A,250V,RDS(on)=1.75Ω(Max)@VGS=10V •Lowgatecharge(Typ.4.3nC) •LowCrss(Typ.4.8pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQD4N25TM

N-ChannelQFETMOSFET

FQI4N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FQP4N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQP4N25

250VChannelMOSFET

GeneralDescription Features

FQPF4N25

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FQT4N25

250VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha