60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：601.08 Kbytes 页数：9 Pages

Fairchild

仙童半导体

60V N-Channel MOSFET

文件：608.02 Kbytes 页数：9 Pages

Fairchild

仙童半导体

60V N-Channel MOSFET

General Description\nThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.\nThis advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta • 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V\n• Low gate charge ( typical 35 nC)\n• Low Crss ( typical 85 pF)\n• Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体

60V N-Channel MOSFET

文件：608.02 Kbytes 页数：9 Pages

Fairchild

仙童半导体