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FQB6N15

150V N-Channel MOSFET

Features •6.4A,150V,RDS(on)=0.6Ω@VGS=10V •Lowgatecharge(typical6.5nC) •LowCrss(typical9.6pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI6N15

150VN-ChannelMOSFET

Features •6.4A,150V,RDS(on)=0.6Ω@VGS=10V •Lowgatecharge(typical6.5nC) •LowCrss(typical9.6pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQP6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQU6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MTD6N15

TMOSPOWERFET6.0AMPERES150VOLTSRDS(on)=0.3OHM

PowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSp

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTD6N15

PowerFieldEffectTransistorDPAKforSurfaceMount

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    FQB6N15

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    150V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
询价
仙童
06+
TO-263
3500
原装库存
询价
FAIRCHILD
24+
TO-263(D2PAK)
8866
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHIL
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
FAIRCHILD/仙童
23+
DIP-6
69820
终端可以免费供样,支持BOM配单!
询价
FAIRCHILD
1709+
SOT-263
32500
普通
询价
FAIRCHILD
23+
TO263
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022+
SOT263
3765
原厂代理 终端免费提供样品
询价
FAIRCILD
22+
TO-263
8000
原装正品支持实单
询价
更多FQB6N15供应商 更新时间2025-7-12 17:06:00