STD3N30L

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.15Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAGEINTUBE(SUFFIX”-1”) ■SURFACE-MOUNTING

FQB3N30

300VN-ChannelMOSFET

Features •3.2A,300V,RDS(on)=2.2Ω@VGS=10V •Lowgatecharge(typical5.5nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQD3N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD3N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FQI3N30

300VN-ChannelMOSFET

Features •3.2A,300V,RDS(on)=2.2Ω@VGS=10V •Lowgatecharge(typical5.5nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQP3N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.2A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQP3N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET

FQPF3N30

300VN-ChannelMOSFET

Features •1.95A,300V,RDS(on)=2.2Ω@VGS=10V •Lowgatecharge(typical5.5nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQU3N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQU3N30

300VN-ChannelMOSFET

300VN-ChannelMOSFET