N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET

文件：481.89 Kbytes 页数：14 Pages

STMICROELECTRONICS

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Power MOSFET

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VBSEMI

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N-Channel 650V (D-S)Power MOSFET

文件：1.90691 Mbytes 页数：9 Pages

VBSEMI

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N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET

文件：481.89 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

文件：1.07823 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL 500V - 2.8 Ohm - 2.3A Zener-Protected SuperMESH MOSFET

The SuperMESH™ series is obtained through an extreme opyimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements S GATE CHARGE MINIMIZED\nTYPICAL R\nDS(on) = 2.8Ω\nESD IMPROVED CAPABILITY)\nEXTREMELY HIGH dv/dt CAPABILITY\nNEW HIGH VOLTAGE BENCHMARK\n100% AVALANCHE TESTED;

ST

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N沟道500 V、2.8 Ohm典型值、2.3 A SuperMESH功率MOSFET，IPAK封装

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv • Extremely high dv/dt capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体

N沟道500 V、2.8 Ohm典型值、2.3 A SuperMESH功率MOSFET，DPAK封装

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv • Extremely high dv/dt capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体