FQD45N03L

N-ChannelLogicLevelPWMOptimizedPowerMOSFET

GeneralDescription ThisdeviceemploysanewadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F

FQI45N03L

30VLOGICN-ChannelMOSFET

FQPF45N03L

30VLOGICN-ChannelMOSFET

GJ45N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

H45N03E

N-ChannelEnhancement-ModeMOSFET(25V,45A)

Features •RDS(on)=15mΩ@VGS=10V,ID=25A •RDS(on)=20mΩ@VGS=4.5V,ID=25A •Advancedtrenchprocesstechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent •ImprovedShoo

MI45N03

N-Channel30-V(D-S)MOSFET

MTB45N03

N-Channel30-V(D-S)MOSFET

P45N03LTG

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

PHB45N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHB45N03LTissuppl

PHB45N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl