STD3N30规格书供应代理意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STD3N30	文件：143.53 Kbytes Page：10 Pages	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.1 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING D 文件：143.53 Kbytes 页数：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STD3N30	文件：300 bytes Page：1 Pages	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR	ST 意法半导体	ST
STD3N30L	文件：170.51 Kbytes Page：10 Pages	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.15 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING 文件：170.51 Kbytes 页数：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STD3N30L	文件：300 bytes Page：1 Pages	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR	ST 意法半导体	ST

更多STD3N30供应商更新时间2026-4-18 16:01:00