STD3N30中文资料意法半导体数据手册PDF规格书

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1.1 Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100°C

■ APPLICATION ORIENTED CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS

■ HIGH SPEED SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ INDUSTRIAL ACTUATORS

■ DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT

■ PARTICULARLY SUITABLE FOR ELECTRONIC FLUORESCENT LAMP BALLASTS