100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：624.78 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.023Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.33 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel MOSFET

ONSEMI

安森美半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：645.4 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=57A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.023Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：294.12 Kbytes 页数：2 Pages

ISC

无锡固电

FQH70N10 100V N-Channel MOSFET

文件：665.75 Kbytes 页数：8 Pages

Fairchild

仙童半导体