丝印：FQB11N40C；Package：D2-PAK；N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high

文件：1.047079 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high

文件：1.047079 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand hig

文件：622.47 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand hig

文件：977.97 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

功率 MOSFET，N 沟道，QFET®， 400 V，10.5 A，530 mΩ，D2PAK

这些 N 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。 这一先进技术是专为最大限度地降低通态电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。 这些器件非常适合高效开关电源、功率因数校正和半桥拓扑的电子灯整流器。 •10.5 A、400 V、RDS(on) = 530 mΩ（最大值）@ VGS = 10 V、ID = 5.25 A\n•低栅极电荷（典型值 28 nC)\n•低 Crss（典型值 85 pF)\n•100% 经过雪崩击穿测试;

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安森美半导体