N-Channel Power MOSFET

Features • 44A, 150V, RDS(on) = 0.028Ω @VGS = 10 V • Low gate charge ( typical 135 nC) • Low Crss ( typical 135 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

文件：740.67 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.73 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

ONSEMI

安森美半导体

N-Channel Enhancement Mode Power MOSFET

文件：524.34 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：371.93 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast

文件：55.77 Kbytes 页数：2 Pages

IXYS

艾赛斯