isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=48A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.039Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：328.7 Kbytes 页数：2 Pages

ISC

无锡固电

FQH70N10 100V N-Channel MOSFET

文件：665.75 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

FQH70N10 100V N-Channel MOSFET

ONSEMI

安森美半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：645.4 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：636.42 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

57A,100V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220

文件：1.54812 Mbytes 页数：7 Pages

THINKISEMI

思祁半导体