FQH90N15

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.018Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQH90N15

N-Channel Power MOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •90A,150V,RDS(on)=0.018Ω@VGS=10V •Lowgatecharge(typical220nC) •LowCrss(typical200pF) •Fastswitching •1

FQH90N15

N-Channel Power MOSFET

FQH90N15_06

N-Channel Power MOSFET

IXTA90N15T

PreliminaryTechnicalInformationTrenchGatePowerMOSFETN-ChannelEnhancementMode

IXTA90N15T

iscN-ChannelMOSFETTransistor

IXTH90N15T

PreliminaryTechnicalInformationTrenchGatePowerMOSFETN-ChannelEnhancementMode

IXTH90N15T

iscN-ChannelMOSFETTransistor

IXTK90N15

N-ChannelEnhancementMode

HighCurrentMegaMOS™FET N-ChannelEnhancementMode Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Advantages •Easyto

IXTK90N15

iscN-ChannelMOSFETTransistor

•FEATURES •DrainSourceVoltage-:VDSS=150V(Min) •Staticdrain-sourceon-resistance:RDS(on)≤16mΩ@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverters •HighCurrentSwitchingApplication