FQI16N15

150V N-Channel MOSFET

Features •16.4A,150V,RDS(on)=0.16Ω@VGS=10V •Lowgatecharge(typical23nC) •LowCrss(typical30pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FQB16N15

150VN-ChannelMOSFET

Features •16.4A,150V,RDS(on)=0.16Ω@VGS=10V •Lowgatecharge(typical23nC) •LowCrss(typical30pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FQD16N15

150VN-ChannelMOSFET

FQP16N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQP16N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FQP16N15

STEREO200WCLASS-TDIGITALAUDIOAMPLIFIERDRIVERUSINGDIGITALPOWERPROCESSINGTECHNOLOGY

GENERALDESCRIPTION TheTK2150(TC2001/TP2150chipset)isatwo-channel,200W(6Ω)perchannelAmplifierDriverthatusesTripath’sproprietaryDigitalPowerProcessing(DPP™)technology.Class-TamplifiersofferboththeaudiofidelityofClass-ABandthepowerefficiencyofClass-Damplifiers. F

FQPF16N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11.6A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQPF16N15

150VNCHANNELMOSFET

150VN-ChannelMOSFET

FQU16N15

150VN-ChannelMOSFET

KSMD16N15

150VN-CHANNELMOSFET