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FQI17P10

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:676.47 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQP17P10

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件:668.91 Kbytes 页数:8 Pages

FAIRCHILD

仙童半导体

FQPF17P10

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:665.67 Kbytes 页数:8 Pages

FAIRCHILD

仙童半导体

17P10

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:676.47 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQA17P10

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:676.74 Kbytes 页数:8 Pages

FAIRCHILD

仙童半导体

FQA17P10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-18A@ TC=25℃ ·Drain Source Voltage- : VDSS=-100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件:363.47 Kbytes 页数:2 Pages

ISC

无锡固电

详细参数

  • 型号:

    FQI17P10

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    100V P-Channel MOSFET

供应商型号品牌批号封装库存备注价格
仙童
06+
TO-262
2500
原装库存
询价
harris
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
FSC/ON
23+
原包装原封 □□
1000
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
询价
onsemi(安森美)
25+
I2PAK(TO-262)
7734
样件支持,可原厂排单订货!
询价
onsemi(安森美)
25+
I2PAK(TO-262)
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
FSC
23+
TO-262
8650
受权代理!全新原装现货特价热卖!
询价
FSC
23+
TO-262
50000
全新原装正品现货,支持订货
询价
FSC
17+
TO-262
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FSC
23+
TO-262
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
FSC
22+
TO-262
20000
公司只做原装 品质保障
询价
更多FQI17P10供应商 更新时间2026-1-17 10:32:00