100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：676.47 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：668.91 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -10.5A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.19Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.66 Kbytes 页数：2 Pages

ISC

无锡固电

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：665.67 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体