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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQI16N25CTU	文件：761.96 Kbytes Page：9 Pages	250V N-Channel MOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
16N25C	文件：1.13842 Mbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
CJP16N25	文件：215.93 Kbytes Page：4 Pages	PowerMOSFET	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
DTU16N25	文件：1.5676 Mbytes Page：7 Pages	N-Channel250-V(D-S)175CMOSFET	DINTEK DinTek Semiconductor Co,.Ltd	DINTEK
FQA16N25	文件：738.94 Kbytes Page：8 Pages	250VN-ChannelMOSFET Features •18.5A,250V,RDS(on)=0.23Ω@VGS=10V •Lowgatecharge(typical27nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA16N25C	文件：869.62 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA16N25C	文件：362.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=17.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQAF16N25	文件：421.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQAF16N25	文件：715.48 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF16N25C	文件：857.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB16N25	文件：752.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •16A,250V,RDS(on)=0.23Ω@VGS=10V •Lowgatecharge(typical27nC) •LowCrss(typical23pF) •Fastswitching •100	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB16N25C	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB16N25CTM	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD16N25C	文件：688.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD16N25C	文件：298.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD16N25CTF	文件：688.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD16N25CTM	文件：688.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI16N25	文件：752.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •16A,250V,RDS(on)=0.23Ω@VGS=10V •Lowgatecharge(typical27nC) •LowCrss(typical23pF) •Fastswitching •100	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI16N25C	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP16N25	文件：736.69 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
FQI16N25CTU
功能描述：
MOSFET N-CH/250V/16A/QFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	FQI16N25CTU	onsemi(安森美)	23+	I2PAK(TO-262)	7828	支持大陆交货,美金交易。原装现货库存。	询价
深圳市永贝尔科技有限公司	FQI16N25CTU	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市鼎盛源芯科技有限公司	FQI16N25CTU	harris	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市正迈科技有限公司	FQI16N25CTU	FSC/ON	23+	原包装原封 □□	3589	原装进口特价供应 QQ 1304306553 更多详细咨询库存	询价
深圳市国宇半导体科技有限公司	FQI16N25CTU	FAIRCHILD仙童	23+	I2PAK	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	FQI16N25CTU	Fairchild/ON	22+	TO2623 Long Leads I2Pak TO262A	9000	原厂渠道,现货配单	询价
深圳市鹏顺微电子科技有限公司	FQI16N25CTU	ON Semiconductor	2022+	TO-262-3,长引线,I2Pak,TO-26	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市旺财半导体有限公司	FQI16N25CTU	Fairchild	23+		33500		询价
深圳市惊羽科技有限公司	FQI16N25CTU	ON-安森美	24+25+/26+27+	TO-262-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市安富世纪电子有限公司	FQI16N25CTU	Fairchild/ON	23+	TO2623 Long Leads I2Pak TO262A	8000	只做原装现货	询价

更多FQI16N25CTU供应商更新时间2024-4-30 16:45:00

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