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FQAF16N25C	文件：857.68 Kbytes Page：8 Pages	250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
16N25C	文件：1.13842 Mbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
CJP16N25	文件：215.93 Kbytes Page：4 Pages	PowerMOSFET	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
DTU16N25	文件：1.5676 Mbytes Page：7 Pages	N-Channel250-V(D-S)175CMOSFET	DINTEK DinTek Semiconductor Co,.Ltd	DINTEK
FQA16N25	文件：738.94 Kbytes Page：8 Pages	250VN-ChannelMOSFET Features •18.5A,250V,RDS(on)=0.23Ω@VGS=10V •Lowgatecharge(typical27nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA16N25C	文件：869.62 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA16N25C	文件：362.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=17.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQAF16N25	文件：421.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQAF16N25	文件：715.48 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB16N25	文件：752.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •16A,250V,RDS(on)=0.23Ω@VGS=10V •Lowgatecharge(typical27nC) •LowCrss(typical23pF) •Fastswitching •100	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB16N25C	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB16N25CTM	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD16N25C	文件：298.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD16N25C	文件：688.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD16N25CTF	文件：688.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD16N25CTM	文件：688.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI16N25	文件：752.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •16A,250V,RDS(on)=0.23Ω@VGS=10V •Lowgatecharge(typical27nC) •LowCrss(typical23pF) •Fastswitching •100	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI16N25C	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI16N25CTU	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP16N25	文件：736.69 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
FQAF16N25C
功能描述：
MOSFET 250V N-Channel Advance Q-FET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	FQAF16N25C	onsemi(安森美)	23+	TO-3PF	8046	支持大陆交货,美金交易。原装现货库存。	询价
深圳市特顺芯科技有限公司	FQAF16N25C	FAIRCHILD	08+(pbfree)	TO-247TO-3PTO-3PF	8866		询价
深圳市永贝尔科技有限公司	FQAF16N25C	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市鼎盛源芯科技有限公司	FQAF16N25C	harris	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市百视威讯电子科技有限公司	FQAF16N25C		23+	N/A	46080	正品授权货源可靠	询价
瀚佳科技(深圳)有限公司	FQAF16N25C	FAIRC	2020+	TO-3PF	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市航润创能电子集团有限公司	FQAF16N25C	FSC	21+	TO-3PF	100	原装现货假一赔十	询价
深圳市科雨电子有限公司	FQAF16N25C	ON	1503+	TO-3P	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市汇莱威科技有限公司	FQAF16N25C	FAIRCHILD/仙童		TO-3P	265209	假一罚十原包原标签常备现货!	询价
深圳市国宇半导体科技有限公司	FQAF16N25C	FAIRCHILD/仙童	23+	TO-3PF	10000	公司只做原装正品	询价

更多FQAF16N25C供应商更新时间2024-5-6 17:47:00

详细参数

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