250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：1.13842 Mbytes 页数：10 Pages

FAIRCHILD

仙童半导体

250V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 16A, 250V, RDS(on) = 0.23 Ω @VGS = 10 V • Low gate charge ( typical 27 nC) • Low Crss ( typical 23 pF) • Fast switching • 100

文件：752.45 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

TMOS POWER FET 16 AMPERES

文件：259.94 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM

文件：222.54 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉