60V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件：660.81 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-11.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=-60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.175Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：333.66 Kbytes 页数：2 Pages

ISC

无锡固电

60V P-Channel MOSFET

文件：653.88 Kbytes 页数：9 Pages

Fairchild

仙童半导体

功率 MOSFET，P 沟道，QFET®，-60 V，-11.4 A，175 mΩ，D2PAK

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-11.4A, -60V, RDS(on)=175mΩ（最大值）@VGS = -10 V, ID = -5.7A\n•低栅极电荷（典型值13nC）\n•低 Crss（典型值45pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\";

ONSEMI

安森美半导体

P-Channel QFET MOSFET -60 V, -11.4 A, 175 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件：1.046329 Mbytes 页数：9 Pages

Fairchild

仙童半导体

60V P-Channel MOSFET

文件：653.88 Kbytes 页数：9 Pages

Fairchild

仙童半导体