N-Channel QFET짰 MOSFET 400 V, 10.5 A, 530 m廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand hig

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Fairchild

仙童半导体

丝印：FQB11N40C；Package：D2-PAK；N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high

文件：1.047079 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

400V N-Channel MOSFET

文件：572.4 Kbytes 页数：9 Pages

DIODES

美台半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：566.92 Kbytes 页数：9 Pages

Fairchild

仙童半导体

400V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand hig

文件：622.47 Kbytes 页数：9 Pages

Fairchild

仙童半导体