100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：635.79 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-11.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=-100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：333.33 Kbytes 页数：2 Pages

ISC

无锡固电

100V P-Channel MOSFET

ONSEMI

安森美半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：624.66 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

P-Channel MOSFET

■ Features ● VDS (V) =-100V ● ID =-9.4 A (VGS =-10V) ● RDS(ON)

文件：2.94782 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel 100 V (D-S) MOSFET

文件：1.01794 Mbytes 页数：9 Pages

VBSEMI

微碧半导体