20V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

Features • BVCEO > 20V • IC = 2.5A Continuous Collector Current • RCE(SAT) = 50mΩ for a low equivalent On-Resistance • 625mW Power dissipation • hFE characterised up to 6A for high current gain hold up • Complementary NPN type: FMMT718 • Totally Lead-Free & Fully RoHS compliant (Notes 1

文件：181.02 Kbytes 页数：8 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 2.5A SOT23-3

DIODES

美台半导体

NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

FEATURES Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.25A COMPLEMENTARY TYPE – FMMTL718 PARTMARKING DETAIL – L68

文件：64.92 Kbytes 页数：3 Pages

Zetex

SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

FEATURES Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.25A COMPLEMENTARY TYPE – FMMTL718 PARTMARKING DETAIL – L68

文件：81.97 Kbytes 页数：3 Pages

DIODES

美台半导体

SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

文件：81.97 Kbytes 页数：3 Pages

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