isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=40A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：330.33 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.04327 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench짰 MOSFET 25 V, 40 A, 5.7 m廓

文件：287.52 Kbytes 页数：6 Pages

Fairchild

仙童半导体

N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=40A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：330.74 Kbytes 页数：2 Pages

ISC

无锡固电

P-channel Enhancement Mode Power MOSFET

Features  VDS= -20V, ID= -100A RDS(ON)

文件：825.02 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench짰 MOSFET 25 V, 5.7 m廓

文件：325.4 Kbytes 页数：6 Pages

Fairchild

仙童半导体