首页 >FCP11N60F>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

MDP11N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDP11N60TH

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MGP11N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托罗拉

MGP11N60E

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGP11N60ED

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block

ONSEMION Semiconductor

安森美半导体安森美半导体公司

OM11N60

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc2未分类制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc2未分类制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They

IRFInternational Rectifier

英飞凌英飞凌科技公司

PCFC11N60W

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PSM11N60CT

11A600VSingleN-ChannelPowerMOSFET

PFCPFC Device Inc.

PFC

PSM11N60CTF

11A600VSingleN-ChannelPowerMOSFET

PFCPFC Device Inc.

PFC

SIHH11N60E

ESeriesPowerMOSFET

FEATURES •Fullylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技

SIHH11N60E

Reducedswitchingandconductionlosses

VishayVishay Siliconix

威世科技

SIHH11N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技

SPA11N60CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA11N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA11N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA11N60CFD

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •QualifiedaccordingtoJEDEC0)fortargetapplication

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N60CFD

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N60CFD

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    FCP11N60F

  • 功能描述:

    MOSFET 600V NCH MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi
24+
TO-220-3
30000
晶体管-分立半导体产品-原装正品
询价
FAIRCHILD/仙童
2022+
TO220
103
原厂授权代理 价格绝对优势
询价
Fairchil
22+
TO-220
8150
绝对原装现货,价格低,欢迎询购!
询价
ONN
23+
N/A
950
原装原装原装哈
询价
onsemi(安森美)
23+
TO-220
8498
支持大陆交货,美金交易。原装现货库存。
询价
FAI
700
询价
FAIRCHILD
2017+
TO220
45248
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FSC
1436+
TO-220
30000
绝对原装进口现货可开增值税发票
询价
FAIRCHIL
23+
TO220
9526
询价
FAIRCHILD
23+
TO-220
8600
全新原装现货
询价
更多FCP11N60F供应商 更新时间2024-5-22 11:19:00