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FCP20N60

600V N-Channel MOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP20N60

600V N-Channel MOSFET

Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP20N60

PFCPWM Combination Controller

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP20N60

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP20N60

600V N-Channel MOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP20N60

isc N-Channel MOSFET Transistor

DESCRIPTION •DrainCurrentID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •FastSwitchingSpeed •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforuseinswitchingmodeoperationforsystemmin-iaturizationandhighere

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCP20N60FS

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP20N60-G

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP20N60S

PFCPWM Combination Controller

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP20N60S

Power Factor Correction Converter Design

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

20N60

20A,600VN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

20N60

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20N60A

20A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

20N60CFD

HITACHIEncapsulation,DIP16

HitachiHitachi, Ltd.

日立公司

20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AFGB20N60SFD

Usingnovelfield−stopIGBTtechnology

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    FCP20N60

  • 功能描述:

    MOSFET 600V N-Channel SuperFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
2021+
TO-220
3580
原装现货/15年行业经验欢迎询价
询价
FAIRCHILD/仙童
22+
TO-220
2
只做原装进口 免费送样!!
询价
FSC/仙童
22+
TO-220
7250
绝对原装现货,价格低,欢迎询购!
询价
仙童
20+
NA
6800
询价
ONN
23+
N/A
4144
原装原装原装哈
询价
onsemi(安森美)
23+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
FAIRCHILD
1436+
TO-220
30000
绝对原装进口现货可开增值税发票
询价
FAI
100
询价
Fairchild
2017+
11
18656
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FAIRCHILD
05+
原厂原装
24216
只做全新原装真实现货供应
询价
更多FCP20N60供应商 更新时间2024-4-28 13:36:00