FCPF260N60E

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FCPF260N60E

600V N-Channel MOSFET

Description SuperFET®IIis,Fairchild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FCPF260N60E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCPF260N60E

600 V、15 A、260 mΩ、N 沟道 SuperFET® II Easy-Drive MOSFET; • TJ=150°C时为 650 V\n• 最大 RDS(on)=260 mΩ\n• 超低栅极电荷（典型值 Qg = 48 nC )\n• 低有效输出电容（典型值 Coss.eff = 129 pF )\n• 100%经过雪崩测试\n;

SuperFET® II MOSFET 是 Fairchild 利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结（SJ）MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET II MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。

FCPF260N60E-F154

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F Ultra narrow lead; • Ultra Low Gate Charge ( Typ. Qg = 48 nC )\n• Low switching loss\n• Low Effective Output Capacitance ( Typ. Coss.eff = 129 pF )\n• Low switching loss\n• 650 V at TJ = 150°C\n• Maximum RDS(on) = 260 mΩ\n• 100% Avalanche Tested\n;

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

FCPF260N60E-F154

丝印：FCPF260N60E；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 15 A, 260 m

Description SUPERFETIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thistechnologyistailoredtominimize conductionloss,providesuper