N-Channel SuperFET짰 II MOSFET

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

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ISC

无锡固电

丝印：FCPF600N60Z；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 7.4 A, 600 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

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ONSEMI

安森美半导体

功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，7.4 A，600 mΩ，TO-220F

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET II MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 • 650 V at TJ = 150°C\n• 最大值 RDS(on) = 600 mΩ\n• 超低栅极电荷（典型值 Qg = 20 nC )\n• 低有效输出电容（典型值 Coss.eff = 74 pF )\n• 100%经过雪崩测试\n• 提高静电放电保护能力;

ONSEMI

安森美半导体

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F

SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perf • 650 V at TJ = 150°C\n• Max. RDS(on) = 600 mΩ\n• Ultra Low Gate Charge ( Typ. Qg = 20 nC )\n• Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF )\n• 100% Avalanche Tested\n• ESD Improved Capacity;

ONSEMI

安森美半导体

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F Ultra narrow lead

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfo • Ultra Low Gate Charge ( Typ. Qg = 20 nC )\n• Low switching loss\n• Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF )\n• Low switching loss\n• 650 V at TJ = 150°C\n• Max. RDS(on) = 600 mΩ\n• 100% Avalanche Tested\n• ESD Improved Capacity;

ONSEMI

安森美半导体