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型号	下载订购	功能描述	制造商上传企业	LOGO
MGP11N60E	文件：120.21 Kbytes Page：5 Pages	SHORT CIRCUIT RATED LOW ON-VOLTAGE Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications 文件：120.21 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MGP11N60E	文件：123.51 Kbytes Page：6 Pages	Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications 文件：123.51 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MGP11N60ED	文件：145.87 Kbytes Page：6 Pages	SHORT CIRCUIT RATED LOW ON-VOLTAGE Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block 文件：145.87 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MGP11N60E	文件：300 bytes Page：1 Pages	SHORT CIRCUIT RATED LOW ON-VOLTAGE	ONSEMI 安森美半导体	ONSEMI
MGP11N60E_D	文件：300 bytes Page：1 Pages	Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor\nN–Channel Enhancement–Mode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requ	恩XP	恩XP
MGP11N60ED_D	文件：300 bytes Page：1 Pages	Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode\nN–Channel Enhancement–Mode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking	恩XP	恩XP

详细参数

型号：
MGP11N60E
制造商：
Rochester Electronics LLC
功能描述：
- Bulk

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	MGP11N60E	Infineon/英飞凌	22+	TO-220	6000	十年配单,只做原装	询价
深圳和润天下电子科技有限公司	MGP11N60E	INFINEON/英飞凌	22+	TO-220	94163		询价
深圳市宏捷佳电子科技有限公司	MGP11N60E	INFINEON	25+	TO-TO-220	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市一线半导体有限公司	MGP11N60ED	ON	24+		90000		询价
深圳市恒凯威科技开发有限公司	MGP11N60ED	ON/安森美	21+	NA	12820	只做原装,质量保证	询价
深圳市美思瑞电子科技有限公司	MGP11N60ED	ON/安森美	22+	N/A	12245	现货,原厂原装假一罚十!	询价
现代芯城（深圳）科技有限公司	MGP11N60ED		24+	N/A	65000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市科恒伟业电子有限公司	MGP11N60ED	ON/安森美	2450+	NA	9850	只做原厂原装正品现货或订货假一赔十!	询价
深圳市高捷芯城科技有限公司	MGP11N60ED	onsemi(安森美)	25+	-	18746	样件支持,可原厂排单订货!	询价
深圳市得捷芯城科技有限公司	MGP11N60ED	onsemi(安森美)	25+	-	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价

更多MGP11N60E供应商更新时间2026-1-25 14:02:00

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