MGP11N60E中文资料PDF规格书
MGP11N60E规格书详情
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.
• Industry Standard TO–220 Package
• High Speed: Eoff = 60 μJ/A typical at 125°C
• High Voltage Short Circuit Capability – 10 μs minimum at 125°C, 400 V
• Low On–Voltage 2.0 V typical at 8.0 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
产品属性
- 型号:
MGP11N60E
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-220 |
94163 |
询价 | |||
ON/安森美 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
ON/安森美 |
23+ |
NA |
25630 |
原装正品 |
询价 | ||
ON/安森美 |
22+ |
NA |
10000 |
绝对全新原装现货热卖 |
询价 | ||
ON/安森美 |
标准封装 |
58998 |
一级代理原装正品现货期货均可订购 |
询价 | |||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 | ||
Infineon/英飞凌 |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
询价 | ||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ON |
08PB |
90000 |
询价 | ||||
ON |
2022+ |
NA |
8600 |
原装正品,欢迎来电咨询! |
询价 |