MGP20N35CL技术资料参数批发供应摩托罗拉-114ic电子网

首页 >MGP20N35CL>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
MGP20N35CL	文件：120.59 Kbytes Page：5 Pages	SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load • Int 文件：120.59 Kbytes 页数：5 Pages	ONSEMI 安森美半导体	ONSEMI
MGP20N35CL	文件：200.47 Kbytes Page：6 Pages	SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integra 文件：200.47 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MGP20N35CL	文件：300 bytes Page：1 Pages	SMARTDISCRETES Internally Clamped, N-Channel IGBT	ONSEMI 安森美半导体	ONSEMI
MGS1R52412	文件：0 bytes Page：0 Pages	SIP/DIP	COSEL 上传：深圳市科芯源微电子有限公司	COSEL
MGS62405	文件：0 bytes Page：0 Pages	原厂封装	COSEL 上传：深圳市恒佳微电子有限公司	COSEL

更多MGP20N35CL供应商更新时间2026-1-17 10:03:00