MGP11N60ED_D中文资料Insulated Gate Bipolar Transistor with Anti-Parallel Diode数据手册恩XP规格书

描述 Description

Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high tempera ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and rugged short circuit device.
• Industry Standard TO–220 Package
• High Speed: Eoff = 60 μJ per Amp typical at 125°C
• High Voltage Short Circuit Capability – 10 °Cs minimum at 125°C, 400 V
• Low On–Voltage — 2.0 V typical at 8.0 A
• Soft Recovery Free Wheeling Diode is included in the Package
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes