SHORT CIRCUIT RATED LOW ON-VOLTAGE

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

文件：145.87 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode\nN–Channel Enhancement–Mode Silicon GateThis Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking

恩XP

POWER MOSFET IN HERMETIC ISOLATED

[Omnirel] DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. The device breakdown ratings provide a substantial voltage margin for stringent applications such as 270 VDC aircraft power and/or rectified 230 VAC power (line operat

文件：33.32 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

POWER MOSFET IN HERMETIC ISOLATED

[Omnirel] DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. The device breakdown ratings provide a substantial voltage margin for stringent applications such as 270 VDC aircraft power and/or rectified 230 VAC power (line operat

文件：33.32 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

POWER MOSFET IN HERMETIC ISOLATED

DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. The device breakdown ratings provide a substantial voltage margin for stringent applications such as 270 VDC aircraft power and/or rectified 230 VAC power (line operation). They

文件：35.79 Kbytes 页数：4 Pages

IRF